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| Datasheet File OCR Text: |
| NTE5427 thru NTE5429 Silicon Controlled Rectifier (SCR) 7 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Off-State Voltage (TC = +110C), VDRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +80C, Conduction Angle of 180), IT(RMS) . . . . . . . . . . . . . . . . . . . 7A Peak Surge (Non-Repetitive) On-State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . 80A Peak Gate-Trigger Current (3s Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate-Power Dissipation (IGT IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +110C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Peak Off-State Current Maximum On-State Voltage DC Holding Current DC Gate-Trigger Current DC Gate-Trigger Voltage Gate Controlled Turn-On Time I2t for Fusing Reference Critical Rate of Off-State Voltage Symbol IRRM IDRM VTM IHOLD IGT VGT tgt I2t VD = 6VDC, RL = 100 VD = 6VDC, RL = 100 IG x 3GT For SCR Protection Test Conditions VRRM = Max, VDRM = Max, TC = +110C, RGK = 1k IT = 7A Min - - - - - - - - - Typ - - - - - - 2 - 100 Max 1 1 2 50 25 1.5 - 2.6 - Unit mA mA V mA mA V s A2sec V/s dv/dt Gate Open, TC = +100C (critical) .352 (8.95) Dia Max .325 (8.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Gate Cathode Anode 45 .031 (.793) |
Price & Availability of NTE5429
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